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中辻寛 2022年 研究業績一覧 (16件 / 217件)
論文
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Ogino, T.,
Insung Seo,
Tajiri, H.,
Nakatake, M.,
Takakura, S.-I.,
Sato, Y.,
Hasegawa, Y.,
Yoshihiro Gohda,
Kan Nakatsuji,
HIROYUKI HIRAYAMA.
Superconductivity in a two monolayer thick indium film on Si(111) 3 × 3 -B,
Physical Review B,
Vol. 106,
No. 4,
July 2022.
公式リンク
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M. Yamada,
K. Yagyu,
S. Ohno,
T. Iimori,
K. Nakatsuji,
F. Komori.
Local (111)-like reconstruction on highly-compressed Cu(001) regions,
Surface Science,
Volume 721,
122063,
July 2022.
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R. Ushioda,
M. Shimura,
K. Nakatsuji,
H. Hirayama.
Growth-rate dependence of the structural transition of bismuth islands on Si(111) substrates,
Physical Review Materials,
Vol. 6,
p. 043403(10pages),
Apr. 2022.
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Tsuyoshi Yamagami,
Taiga Kasai,
Kan Nakatsuji,
Hiroyuki Hirayama.
Bismuth Intercalation at the Graphene/Cu(111) Interface with [2012] Long-Range Ordering,
Journal of the Physical Society of Japan,
Vol. 91,
No. 4,
p. 043601(5pages),
Mar. 2022.
国際会議発表 (査読有り)
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Insung Seo,
Kan Nakatsuji,
Hiroyuki Hirayama,
Yoshihiro Gohda.
Electronic structure and interactions of In thin film on Si(111)√3×√3-B,
14th International Symposium on Atomic Level Characterizations for New Materials and Devices '22,
Oct. 2022.
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Insung Seo,
Kan Nakatsuji,
Hiroyuki Hirayama,
Yoshihiro Gohda.
Interfacial Structures of In Double Layers on Si(111)√3×√3-B Substrates,
The 22nd International Vacuum Congress,
Sept. 2022.
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Insung Seo,
Kan Nakatsuji,
Hiroyuki Hirayama,
Yoshihiro Gohda.
Electronic structure of In ultrathin films adsorbed on Si(111)√3×√3-B surfaces,
European Conference on Surface Science 35,
Aug. 2022.
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Insung Seo,
Kan Nakatsuji,
Hiroyuki Hirayama,
Yoshihiro Gohda.
Structural and Electronic Properties of In Double Layers on Si(111)√3×√3-B,
The 2022 MRS Spring Meeting,
May 2022.
国際会議発表 (査読なし・不明)
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T. Kasai,
T. Yamagami,
K. Nakatsuji,
H. Hirayama.
Bi Intercalation at the Graphene/Cu(111) Interface,
The 22nd International Vacuum Congress,
Sept. 2022.
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T. Ogino,
I. Seo,
H. Tajiri,
M. Nakatake,
S. Takakura,
Y. Sato,
Y. Hasegawa,
Y. Gohda,
K. Nakatsuji,
H. Hirayama.
Intrinsic superconductivity of two monolayer thick Indium film,
The 22nd International Vacuum Congress,
Sept. 2022.
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N. Sasagawa,
Y. Itakura,
K. Kizaki,
K. Nakatsuji,
H. Hirayama.
Observation of the buried interface under the ultrathin In film on the Si(111)7x7 substrate; Revisit,
The 22nd International Vacuum Congress,
Sept. 2022.
国内会議発表 (査読なし・不明)
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大内拓実,
長尾俊祐,
中村玲雄,
竹村晃一,
志村舞望,
潮田亮太,
飯盛拓嗣,
小森文夫,
平山博之,
中辻寛.
Si(111)√3×√3-B 表面上のBi(110)超薄膜の電子状態における基板依存性,
日本物理学会第76回年次大会,
Mar. 2022.
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永友慶,
森井七生,
竹村晃一,
飯盛拓嗣,
小森文夫,
平山博之,
中辻寛.
PdCu表面合金層の電子構造と水素曝露が及ぼす影響,
Mar. 2022.
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志村舞望,
潮田亮太,
中辻寛,
平山博之.
二段階成長における平坦な黒燐構造Bi(110)超薄膜の成長過程,
日本物理学会第76回年次大会,
Mar. 2022.
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笹川直希,
板倉悠太,
木崎京香,
中辻寛,
平山博之.
Si(111)7×7基板上のIn薄膜における結晶成長と埋もれた界面の研究,
日本物理学会第76回年次大会,
Mar. 2022.
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森井七生,
永友慶,
竹村晃一,
河添理央,
飯盛拓嗣,
小森文夫,
平山博之,
中辻寛.
Cu(001)c(4×2)-Bi表面の構造形成と電子状態,
日本物理学会第76回年次大会,
Mar. 2022.
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