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Patent Information
Title
二酸化チタンを活性層として用いる半導体装置およびその製造方法
Author
HIDEOMI KOINUMA
,
YUJI MATSUMOTO
.
Kind
Patent
Status
Published
Applicant
国立大学法人東京工業大学, 独立行政法人科学技術振興機構.
Filing Date
2006/02/23
Application Number
特願2007-510338
Unexamined Application Date
2006/10/05
Publication Number
WO2006/103853
©2007
Tokyo Institute of Technology All rights reserved.