Tokyo Tech Research Repository (T2R2)

Patent Information

Title

窒化銅半導体およびその製造方法

Author

Kosuke, Tomofumi Susaki, HIDEO HOSONO, Akihiro Maeda.

Kind

Patent

Status

Registered

Applicant

国立大学法人東京工業大学.

Filing Date

2016/01/29

Application Number

特願2016-015961

Unexamined Application Date

2017/08/03

Publication Number

特開2017-135329

Registration Date

2020/06/04

Registration Number

特許第6712798号

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