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Patent Information
Title
酸化物半導体化合物の層、酸化物半導体化合物の層を備える半導体素子、および積層体
Author
HIDEO HOSONO
,
TOSHIO KAMIYA
,
Hideya Kumomi
,
Junghwan Kim
.
Kind
Patent
Status
Registered
Applicant
国立大学法人東京工業大学, AGC株式会社.
Filing Date
2017/02/23
Application Number
特願2018-503092
Unexamined Application Date
2019/01/10
Publication Number
再表2017/150351
Registration Date
2022/08/26
Registration Number
特許第7130209号
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