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Title
磁性体とＢｉＳｂの積層構造の製造方法、磁気抵抗メモリ、純スピン注入源 
Author
Namhai Pham.  
Kind
Patent 
Status
Registered 
Applicant
国立大学法人東京工業大学.  
Filing Date
2018/09/14
Application Number
特願2019-542310
Unexamined Application Date
2020/10/15
Publication Number
再表2019-054484
Registration Date
2023/02/14
Registration Number
特許第7227614号

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