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Patent Information
Title
磁気抵抗素子および磁気抵抗素子の製造方法、ならびに半導体装置および半導体装置の製造方法
Author
Namhai Pham
,
Huy Ho-Hoang
.
Kind
Patent
Status
Published
Applicant
国立大学法人東京科学大学, 日本サムスン株式会社.
Filing Date
2024/09/03
Application Number
特願2024-151827
Unexamined Application Date
2026/03/13
Publication Number
特開2026-046935
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Institute of Science Tokyo All rights reserved.