Novel SOI Fabrication Process Utilizing the Selective Etching for Si/SiGe Stacked Layers: Separation by Bonding Si Islands Technology (SBSI)

Publication Information

Title

Japanese:
English:	Novel SOI Fabrication Process Utilizing the Selective Etching for Si/SiGe Stacked Layers: Separation by Bonding Si Islands Technology (SBSI)

Author

Japanese:	S. Ohmi, H. Ohri, T. Yamazaki, M. Sakuraba, J. Murota, T. Sakai.
English:	S. Ohmi, H. Ohri, T. Yamazaki, M. Sakuraba, J. Murota, T. Sakai.

Language

English

Journal/Book name

Japanese:
English:	Third International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of properties and applications to ultrahigh speed and opto-electronic devices

Volume, Number, Page

pp. 77-78

Published date

Oct. 2004

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:	Sendai, Japan