25 nm Wide Emitter and Precise Alignment between Gate and Emitter in InP Hot Electron Transistors

Publication Information

Title

Japanese:
English:	25 nm Wide Emitter and Precise Alignment between Gate and Emitter in InP Hot Electron Transistors

Author

Japanese:	宮本恭幸, R. Nakagawa, I. Kashima, K. Takeuchi, Y. Yamada, T. Fujisaki, M. Ishida, 古屋一仁.
English:	Y. Miyamoto, R. Nakagawa, I. Kashima, K. Takeuchi, Y. Yamada, T. Fujisaki, M. Ishida, KAZUHITO FURUYA.

Language

English

Journal/Book name

Japanese:	Topical Workshop on Heterostructure Microelectronics
English:

Volume, Number, Page

pp. TuC-3

Published date

Aug. 2005

Publisher

Japanese:
English:

Conference name

Japanese:
English:	The 6th Topical Workshop on Heterostructure Microelectronics (TWHM 2005)

Conference site

Japanese:
English:	Awaji-island