Measurement of Gas Temperature in a SiH4/H2 Plasma under High-Rate Growth Conditions of Micro-Crystalline Silicon

Publication Information

Title

Japanese:
English:	Measurement of Gas Temperature in a SiH4/H2 Plasma under High-Rate Growth Conditions of Micro-Crystalline Silicon

Author

Japanese:	S. Nunomura, H. Akatsuka, M. Kondo.
English:	S. Nunomura, H. Akatsuka, M. Kondo.

Language

English

Journal/Book name

Japanese:
English:	6th International Conference on Reactive Plasmas and 23rd Symposium on Plasma Processing

Volume, Number, Page

pp. 771-772

Published date

Jan. 2006

Publisher

Japanese:
English:

Conference name

Japanese:
English:	6th International Conference on Reactive Plasmas and 23rd Symposium on Plasma Processing (ICRP6/SPP23)

Conference site

Japanese:
English:	Matsushima, Miyagi, Japan