Effects of low temperature annealing on the ultrathin La2O3 gate dielectric; comparison of post deposition annealing and post metallization annealing

Publication Information

Title

Japanese:
English:	Effects of low temperature annealing on the ultrathin La2O3 gate dielectric; comparison of post deposition annealing and post metallization annealing

Author

Japanese:	J.-A. Ng, Y. Kuroki, N. Sugii, K. Kakushima, S. Ohmi, K. Tsutsui, T. Hattori, H. Iwai, H. Wong.
English:	J.-A. Ng, Y. Kuroki, N. Sugii, K. Kakushima, S. Ohmi, K. Tsutsui, T. Hattori, H. Iwai, H. Wong.

Language

English

Journal/Book name

Japanese:
English:	Microelectron. Eng.

Volume, Number, Page

Vol. 80 pp. 206-209

Published date

June 2005

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: