Analysis of short-channel Schottky source/drain metal-oxide-semiconductor field-effect transistor on silicon-on-insulator substrate and demonstration of sub-50nm n-type  devices with metal gate

Publication Information

Title

Japanese:
English:	Analysis of short-channel Schottky source/drain metal-oxide-semiconductor field-effect transistor on silicon-on-insulator substrate and demonstration of sub-50nm n-type devices with metal gate

Author

Japanese:	W.Saitoh, A.Itoh, S.Yamagami, M.Asada.
English:	W.Saitoh, A.Itoh, S.Yamagami, M.Asada.

Language

English

Journal/Book name

Japanese:
English:	Japan.J.Appl.Phys.

Volume, Number, Page

Vol. 38 No. 11 pp. 6226-6231

Published date

1999

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: