Very shallow n-GaAs ohmic contact with 10nm thick GaInAs layer

Publication Information

Title

Japanese:
English:	Very shallow n-GaAs ohmic contact with 10nm thick GaInAs layer

Author

Japanese:	Y. Miyamoto, R. Yamamoto, H. Tobita, K. Furuya.
English:	Y. Miyamoto, R. Yamamoto, H. Tobita, K. Furuya.

Language

English

Journal/Book name

Japanese:
English:	19th Electronic Materials Symposium

Volume, Number, Page

Vol. B2

Published date

2000

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: