High electric field photocurrent of Vidicon and diode devices using wide band gap a-Si:H prepared with intentional control of silicon network by chemical annealing

Publication Information

Title

Japanese:
English:	High electric field photocurrent of Vidicon and diode devices using wide band gap a-Si:H prepared with intentional control of silicon network by chemical annealing

Author

Japanese:	W. Futako, T. Sugawara, T. Kamiya, I. Shimizu.
English:	W. Futako, T. Sugawara, T. Kamiya, I. Shimizu.

Language

English

Journal/Book name

Japanese:
English:	J. Organometallic Chemistry

Volume, Number, Page

Vol. 611 pp. 525

Published date

2000

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: