A 25-nm-long channel metal-gate p-type Schottky source/drain metal-oxide-semiconductor field effect transistor on SIMOX substrate

Publication Information

Title

Japanese:
English:	A 25-nm-long channel metal-gate p-type Schottky source/drain metal-oxide-semiconductor field effect transistor on SIMOX substrate

Author

Japanese:	A.Itoh, M.Saitoh, M.Asada.
English:	A.Itoh, M.Saitoh, M.Asada.

Language

English

Journal/Book name

Japanese:
English:	Japan.J.Appl.Phys.

Volume, Number, Page

Vol. 39 No. 8 pp. 4757-4758

Published date

2000

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: