Sub-micron GaInAs/InP Hot Electron Transistors by EBL process and size dependence of current gain

Publication Information

Title

Japanese:
English:	Sub-micron GaInAs/InP Hot Electron Transistors by EBL process and size dependence of current gain

Author

Japanese:	Y.Miyamoto, J.Yoshinaga, H.Toda, T.Arai, H.Hongo, T.Hattori, A.Kokubo, K.Furuya.
English:	Y.Miyamoto, J.Yoshinaga, H.Toda, T.Arai, H.Hongo, T.Hattori, A.Kokubo, K.Furuya.

Language

English

Journal/Book name

Japanese:
English:	Solid State Electronics

Volume, Number, Page

Vol. 42 No. 7-8 pp. 1467

Published date

1998

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: