Self-Aligned 10-nm Barrier Formation Technology for Fully-Self-Aligned Metallization Metal -Oxide-Semiconductor Field-Effect-Transistor

Publication Information

Title

Japanese:
English:	Self-Aligned 10-nm Barrier Formation Technology for Fully-Self-Aligned Metallization Metal -Oxide-Semiconductor Field-Effect-Transistor

Author

Japanese:	H. Matsuhashi, A. Gotoh, C. H. Lee, M. Yokoyama, K. Masu, K. Tsubouchi.
English:	H. Matsuhashi, A. Gotoh, C. H. Lee, M. Yokoyama, K. Masu, K. Tsubouchi.

Language

English

Journal/Book name

Japanese:
English:	Jpn. J. Appl. Phys.

Volume, Number, Page

Vol. 37 No. 6A pp. 3264-3267

Published date

1998

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: