Low Leakage La┣D22┫D2O┣D23┫D2 Gate Insulator Film with EOTs of 0.8-1.2 nm

Publication Information

Title

Japanese:
English:	Low Leakage La┣D22┫D2O┣D23┫D2 Gate Insulator Film with EOTs of 0.8-1.2 nm

Author

Japanese:	S.Ohmi, C. Kobayashi, E. Tokumitsu, H. Ishiwara, H.Iwai.
English:	S.Ohmi, C. Kobayashi, E. Tokumitsu, H. Ishiwara, H.Iwai.

Language

English

Journal/Book name

Japanese:
English:	2001 International Conference on Solid State Devices and Conferences

Volume, Number, Page

pp. 496-497

Published date

2001

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: