MOVPE法によるSiO2基板上へのGaN系結晶の成長(III)-ヘテロ構造の成長

Publication Information

Title

Japanese:	MOVPE法によるSiO2基板上へのGaN系結晶の成長(III)-ヘテロ構造の成長
English:	GaN-based Crystal Growth on SiO2 substrate by MOVPE (III) -Growth of Hetero-Structure-

Author

Japanese:	森口雄一郎, 宮本智之, 坂口孝浩, 岩田雅年, 内田慶彦, 小山二三夫, 伊賀健一.
English:	森口雄一郎, 宮本智之, 坂口孝浩, 岩田雅年, 内田慶彦, 小山二三夫, 伊賀健一.

Language

Japanese

Journal/Book name

Japanese:	2000年春季第47回応用物理学関連連合講演会
English:	Extended Abstracts (The 47th Spring Meeting) of Jpn. Soc. Appl. Phys.

Volume, Number, Page

Vol. 1 No. 28p-YN-4 pp. 346

Published date

Mar. 2000

Publisher

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Conference name

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Conference site

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