Reduction of Parasitic Resistances in Wide-Gate Fully Self-Aligned-Metallization MOSFET

Publication Information

Title

Japanese:
English:	Reduction of Parasitic Resistances in Wide-Gate Fully Self-Aligned-Metallization MOSFET

Author

Japanese:	M. Yokoyama, R. Tajima, H. Matsuhashi, K. Masu, K. Tsubouchi.
English:	M. Yokoyama, R. Tajima, H. Matsuhashi, K. Masu, K. Tsubouchi.

Language

English

Journal/Book name

Japanese:
English:	Proceedings of Advanced Metallization and Interconnect Systems for ULSI Applications in 1997

Volume, Number, Page

pp. 185-190

Published date

1998

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: