MOVPE法によるSiO<sub>&lt;small&gt;2&lt;/small&gt;</sub>基板上へのGaN系結晶の成長(II)-InGaNの結晶成長と特性

Publication Information

Title

Japanese:	MOVPE法によるSiO_{<small>2</small>}基板上へのGaN系結晶の成長(II)-InGaNの結晶成長と特性
English:	GaN-based crystal growth on SiO_{<small>2</small>} substrate by MOVPE (II) - growth and characterization of InGaN -

Author

Japanese:	森口雄一郎, 宮本智之, 坂口孝浩, 井上彰, 岩田雅年, 内田慶彦, 小山二三夫, 伊賀健一.
English:	森口雄一郎, Tomoyuki Miyamoto, Takahiro Sakaguchi, 井上彰, 岩田雅年, 内田慶彦, FUMIO KOYAMA, Kenichi Iga.

Language

Japanese

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Mar. 1999

Publisher

Japanese:
English:

Conference name

Japanese:	第46回応用物理学関連連合講演会
English:	The 46th Spring Meeting of Japan Society of Applied Physics and Related Societies

Conference site

Japanese:	千葉
English:	Chiba