High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

Publication Information

Title

Japanese:
English:	High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

Author

Japanese:	Hisato Yabuta, Masafumi Sano, Katsumi Abe, Toshiaki Aiba, Tohru Den, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Hideo Hosono.
English:	Hisato Yabuta, Masafumi Sano, Katsumi Abe, Toshiaki Aiba, Tohru Den, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Hideo Hosono.

Language

English

Journal/Book name

Japanese:
English:	Appl. Phys. Lett.

Volume, Number, Page

Vol. 89 pp. 112123-1 - 3

Published date

2006

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: