Fabrication of III-V-O-I(III-V on Insulator) Structures on Si Using Micro-Channel Epitaxy with a Two-Step Growth Technique

Publication Information

Title

Japanese:
English:	Fabrication of III-V-O-I(III-V on Insulator) Structures on Si Using Micro-Channel Epitaxy with a Two-Step Growth Technique

Author

Japanese:	M.Shichijo, R.Nakane, 菅原聡, S.Takagi.
English:	M.Shichijo, R.Nakane, S.Sugahara, S.Takagi.

Language

English

Journal/Book name

Japanese:
English:	2006 Intl. Conf. on Solid State Devices and Materials (SSDM 2006)

Volume, Number, Page

pp. 1088-1089 paper I-8-1

Published date

Sept. 2006

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2006 Intl. Conf. on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan,

Conference site

Japanese:
English: