Effect of Tensile Strain on Gate and Substrate Currents of Strained-Si n-MOSFETs

Publication Information

Title

Japanese:
English:	Effect of Tensile Strain on Gate and Substrate Currents of Strained-Si n-MOSFETs

Author

Japanese:	T.Hoshii, S.Sugahara, S.Takagi.
English:	T.Hoshii, S.Sugahara, S.Takagi.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

pp. paper H-1-3, pp. p164-165

Published date

2006

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2006 Intl. Conf. on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan,

Conference site

Japanese:
English: