Effect of Tensile Strain on Gate Current of Strained-Si n-MOSFETs | Science Tokyo Research Repository (T2R2)

Publication Information

Title

Japanese:
English:	Effect of Tensile Strain on Gate Current of Strained-Si n-MOSFETs

Author

Japanese:	T.Hoshii, 菅原聡, S.Takagi.
English:	T.Hoshii, S.Sugahara, S.Takagi.

Language

English

Journal/Book name

Japanese:
English:	Jpn. J. Appl. Phys.

Volume, Number, Page

Vol. 46 No. 4B pp. 2122-2126

Published date

Apr. 2007

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

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