D.C.バイアス印加によるPECVD-TEOSゲート酸化膜の特性改善

Publication Information

Title

Japanese:	D.C.バイアス印加によるPECVD-TEOSゲート酸化膜の特性改善
English:	Improvement of PECVD TEOS gate oxide with D.C. bias on the substrate

Author

Japanese:	イムチョルヒョン, 飯野裕明, 半那純一.
English:	Cheolhyun Lim, Hiroaki Iino, Jun-ichi Hanna.

Language

Japanese

Journal/Book name

Japanese:	第54回応用物理学会関係連合講演会講演予稿集
English:	Extended Abstracts (The 54th Spring Meeting, 2007) The Japan Society of Applied Physics and Related Societies

Volume, Number, Page

Vol. AP071108-02 pp. 868

Published date

Mar. 2007

Publisher

Japanese:
English:

Conference name

Japanese:	第54回応用物理学会関係連合講演会
English:

Conference site

Japanese:	青山学院大学、神奈川
English: