ECR Ar/N<sub>2</sub> Plasma Nitridation of HfO<sub>2</sub> for High-k Gate Insulator Applications

Publication Information

Title

Japanese:
English:	ECR Ar/N₂ Plasma Nitridation of HfO₂ for High-k Gate Insulator Applications

Author

Japanese:	Shun-ichiro Ohmi, Tomoki Kurose, Masaki Satoh, Takafumi Uchikawa.
English:	Shun-ichiro Ohmi, Tomoki Kurose, Masaki Satoh, Takafumi Uchikawa.

Language

English

Journal/Book name

Japanese:
English:	2005 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices, Ext. Abst.

Volume, Number, Page

pp. 7-10

Published date

June 2005

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:	Soeul National University