Ultrathin HfOxNy Gate Insulator Formation by Electron Cyclotron resonance Ar/N2 Plasma nitridation of HfO2 Thin Films

Publication Information

Title

Japanese:
English:	Ultrathin HfOxNy Gate Insulator Formation by Electron Cyclotron resonance Ar/N2 Plasma nitridation of HfO2 Thin Films

Author

Japanese:	S. Ohmi, T. Kurose, M. Sato.
English:	S. Ohmi, T. Kurose, M. Sato.

Language

English

Journal/Book name

Japanese:
English:	IEICE Trans. Electron.

Volume, Number, Page

Vol. E89-C No. 1 pp. 596-601

Published date

May 2006

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: