Fabrication of 200-nm-thick SiO2 wires buried in InP for reduction in collector capacitance in InP/InGaAs DHBT

Publication Information

Title

Japanese:
English:	Fabrication of 200-nm-thick SiO2 wires buried in InP for reduction in collector capacitance in InP/InGaAs DHBT

Author

Japanese:	山下浩明, 三浦司, 高橋新之助, 宮本恭幸, 古屋一仁.
English:	Hiroaki Yamashita, Tsukasa Miura, Shinnosuke Takahashi, YASUYUKI MIYAMOTO, KAZUHITO FURUYA.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Aug. 2007

Publisher

Japanese:
English:

Conference name

Japanese:
English:	7th Topical Workshop on Heterostructure Microelectronics

Conference site

Japanese:
English:	Kisarazu Chiba

Official URL