Investigation of PDA Process to Improve Electrical Characteristics of HfOxNy High-k Dielectric Formed by ECR Plasma Oxidation of HfN

Publication Information

Title

Japanese:
English:	Investigation of PDA Process to Improve Electrical Characteristics of HfOxNy High-k Dielectric Formed by ECR Plasma Oxidation of HfN

Author

Japanese:	大見俊一郎, Y. Nakano.
English:	S. Ohmi, Y. Nakano.

Language

English

Journal/Book name

Japanese:
English:	2007 International Symposium on Semiconductor Manufacturing, Conf. Proc.

Volume, Number, Page

pp. 514-517

Published date

Oct. 2007

Publisher

Japanese:
English:	IEEE

Conference name

Japanese:
English:	2007 International Symposium on Semiconductor Manufacturing

Conference site

Japanese:
English:	Santaclara, USA