Japanese
Home
Search
Horizontal Search
Publication Search
( Advanced Search )
Patent Search
( Advanced Search )
Research Highlight Search
( Advanced Search )
Researcher Search
Search by Organization
Support
FAQ
T2R2 User Registration
Doctoral thesis registration
Support/Contact
About T2R2
What's T2R2?
Operation Guidance
Leaflets
About file disclosure
Related Links
Tokyo Tech
STAR Search
NII IR Program
Home
>
Help
Publication Information
Title
Japanese:
HfNのECRプラズマ酸化により形成したHfOxNyのPDAプロセスの検討
English:
Author
Japanese:
大見俊一郎
.
English:
Shun-ichiro OHMI
.
Language
Japanese
Journal/Book name
Japanese:
International Symposium on Semiconductor Manufacturing 2007 日本特別報告会 Conf. Proc.
English:
Volume, Number, Page
pp. 25-33
Published date
Nov. 2007
Publisher
Japanese:
ISSM日本事務局
English:
Conference name
Japanese:
International Symposium on Semiconductor Manufacturing 2007 日本特別報告会
English:
Conference site
Japanese:
ベルサーレ九段
English:
©2007
Tokyo Institute of Technology All rights reserved.