Modeling of amorphous InGaZnO<sub>4</sub> thin film transistors and their subgap density of states

Publication Information

Title

Japanese:
English:	Modeling of amorphous InGaZnO₄ thin film transistors and their subgap density of states

Author

Japanese:	Hsing-Hung Hsieh, 神谷利夫, Kenji Nomura, 細野秀雄, Chung-Chih Wu.
English:	Hsing-Hung Hsieh, Toshio Kamiya, Kenji Nomura, Hideo Hosono, Chung-Chih Wu.

Language

English

Journal/Book name

Japanese:
English:	Appl. Phys. Lett.

Volume, Number, Page

Vol. 92 p. 133503

Published date

2008

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: