Superior MOS Interface Properties of GeO2/Ge Structures Fabricated by Ozone Oxidation

Publication Information

Title

Japanese:
English:	Superior MOS Interface Properties of GeO2/Ge Structures Fabricated by Ozone Oxidation

Author

Japanese:	S. Takagi, H. Matsubara, M. Nishikawa, T. Sasada, 中根了昌, 菅原聡, M. Takenaka.
English:	S. Takagi, H. Matsubara, M. Nishikawa, T. Sasada, R. Nakane, S. Sugahara, M. Takenaka.

Language

English

Journal/Book name

Japanese:
English:	The 5th Intl. Symp. on Control of Semiconductor Interfaces -for Next Generation ULSI Process Integrations- (ISCSI-V)

Volume, Number, Page

pp. 65-66, paper OA2-1

Published date

Nov. 2007

Publisher

Japanese:
English:

Conference name

Japanese:
English:	The 5th Intl. Symp. on Control of Semiconductor Interfaces -for Next Generation ULSI Process Integrations- (ISCSI-V)

Conference site

Japanese:
English: