Effect of Annealing on (100) and (110) Oriented pseudo-GOI pMOSFETs Fabricated by Ge Condensation Method

Publication Information

Title

Japanese:
English:	Effect of Annealing on (100) and (110) Oriented pseudo-GOI pMOSFETs Fabricated by Ge Condensation Method

Author

Japanese:	S. Dissanayake, S. Tanabe, 菅原聡, M. Takenaka, S. Takagi.
English:	S. Dissanayake, S. Tanabe, S. Sugahara, M. Takenaka, S. Takagi.

Language

English

Journal/Book name

Japanese:
English:	The 5th Intl. Symp. on Control of Semiconductor Interfaces -for Next Generation ULSI Process Integrations- (ISCSI-V)

Volume, Number, Page

pp. 233-234, paper OB3-3

Published date

Nov. 2007

Publisher

Japanese:
English:

Conference name

Japanese:
English:	The 5th Intl. Symp. on Control of Semiconductor Interfaces -for Next Generation ULSI Process Integrations- (ISCSI-V)

Conference site

Japanese:
English: