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Publication Information
Title
Japanese:
English:
Comparison of Wafer Bonding Methods of Membrane GaInAsP WiredWaveguides on Si Substrate
Author
Japanese:
榎本晴基
, グェン ドゥック ハイ,
井上 敬太
,
阪本 真一
,
奥村 忠嗣
,
西山 伸彦
,
近藤 志文
,
荒井 滋久
.
English:
Haruki Enomoto
, Hai Duc Nguyen,
Keita Inoue
,
Shinichi Sakamoto
,
Tadashi Okumura
,
Nobuhiko Nishiyama
,
Shimon Kondo
,
Shigehisa Arai
.
Language
English
Journal/Book name
Japanese:
English:
2008 International Nano-Optoelectronics Workshop
Volume, Number, Page
session3-P27
Published date
Aug. 2008
Publisher
Japanese:
English:
Conference name
Japanese:
English:
2008 International Nano-Optoelectronics Workshop
Conference site
Japanese:
English:
Tokyo, Lake Saiko, Shonan Village, Japan
Abstract
SiO2/SiO2 direct wafer bonding and BCB bonding have been compared to realize membrane GaInAsP wired waveguides on Si Substrate. Bonding environment and pressure were essential for BCB bonding and SiO2 direct bonding, respectively.
©2007
Tokyo Institute of Technology All rights reserved.