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Title
Japanese: 
English:Comparison of Wafer Bonding Methods of Membrane GaInAsP WiredWaveguides on Si Substrate 
Author
Japanese: 榎本晴基, グェン ドゥック ハイ, 井上 敬太, 阪本 真一, 奥村 忠嗣, 西山 伸彦, 近藤 志文, 荒井 滋久.  
English: Haruki Enomoto, Hai Duc Nguyen, Keita Inoue, Shinichi Sakamoto, Tadashi Okumura, Nobuhiko Nishiyama, Shimon Kondo, Shigehisa Arai.  
Language English 
Journal/Book name
Japanese: 
English:2008 International Nano-Optoelectronics Workshop 
Volume, Number, Page     session3-P27   
Published date Aug. 2008 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English:2008 International Nano-Optoelectronics Workshop 
Conference site
Japanese: 
English:Tokyo, Lake Saiko, Shonan Village, Japan 
Abstract SiO2/SiO2 direct wafer bonding and BCB bonding have been compared to realize membrane GaInAsP wired waveguides on Si Substrate. Bonding environment and pressure were essential for BCB bonding and SiO2 direct bonding, respectively.

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