Hot electron transistor controlled by insulated gate with 70nm-wide emitter

Publication Information

Title

Japanese:
English:	Hot electron transistor controlled by insulated gate with 70nm-wide emitter

Author

Japanese:	齋藤尚史, Takahiro Hino, 宮本恭幸, 古屋一仁.
English:	Hisashi Saito, Takahiro Hino, Yasuyuki Miyamoto, Kazuhito Furuya.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

May 2008

Publisher

Japanese:
English:

Conference name

Japanese:
English:	IEEE 20th Conference on Indium Phosphide and Related Materials

Conference site

Japanese:
English:	Versailles - France