Publication Information

Title

Japanese:
English:	Lateral Buried Growth of N+-InGaAs Source/Drain Region to Undercut InGaAs Channel Structure for High Drive Current N-type MOSFET

Author

Japanese:	金澤徹, 齋藤尚史, 若林和也, 宮本恭幸, 古屋一仁.
English:	T. Kanazawa, H. Saito, K. Wakabayashi, Y. Miyamoto, K. Furuya.

Language

Others

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Sept. 2008

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2008 International Conference on Solid State Devices and Materials

Conference site

Japanese:
English:	Tsukuba, Ibaraki

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