Layout-aware compact model of MOSFET characteristics variations induced by STI stress

Publication Information

Title

Japanese:
English:	Layout-aware compact model of MOSFET characteristics variations induced by STI stress

Author

Japanese:	Kenta Yamada, 佐藤高史, 中山範明, 天川修平, 益一哉.
English:	Kenta Yamada, Takashi Sato, Noriaki Nakayama, Shuhei Amakawa, Kazuya Masu.

Language

English

Journal/Book name

Japanese:
English:	IEICE Transactions on Electronics

Volume, Number, Page

Vol. E91-C No. 7 pp. 1142-1150

Published date

July 2008

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI