超薄層ベースInP 系HBT におけるGraded Base によるベース走行時間短縮

Publication Information

Title

Japanese:	超薄層ベースInP 系HBT におけるGraded Base によるベース走行時間短縮
English:	Reduction of the Base Transit Time in Ultra-thin Graded-Base InP/GaInAs Heterojunction Bipolar Transistor

Author

Japanese:	上澤岳史, 山田真之, 宮本恭幸, 古屋一仁.
English:	Takafumi Uesawa, Masayuki Yamada, YASUYUKI MIYAMOTO, KAZUHITO FURUYA.

Language

Japanese

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Jan. 2009

Publisher

Japanese:
English:

Conference name

Japanese:
English:	Technical Report of IEICE, Electron Devices

Conference site

Japanese:	東京
English:	Tokyo, Japan