超薄層ベースInP/GaInAs HBTの組成傾斜によるベース走行時間短縮

Publication Information

Title

Japanese:	超薄層ベースInP/GaInAs HBTの組成傾斜によるベース走行時間短縮
English:	Reduction of the base transit time in ultra-thin graded base InP/GaInAs Heterojunction Bipolar Transistor

Author

Japanese:	上澤岳史, 山田真之, 宮本恭幸, 古屋一仁.
English:	Takafumi Uesawa, Masayuki Yamada, YASUYUKI MIYAMOTO, KAZUHITO FURUYA.

Language

Japanese

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Mar. 2009

Publisher

Japanese:
English:

Conference name

Japanese:	2009年春季第56回応用物理学関係連合講演会
English:	The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies

Conference site

Japanese:	茨城県つくば市
English:	Ibaraki, Japan