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Publication Information
Title
Japanese:
超薄層ベースInP/GaInAs HBTの組成傾斜によるベース走行時間短縮
English:
Reduction of the base transit time in ultra-thin graded base InP/GaInAs Heterojunction Bipolar Transistor
Author
Japanese:
上澤岳史
,
山田真之
,
宮本恭幸
,
古屋一仁
.
English:
Takafumi Uesawa
,
Masayuki Yamada
,
YASUYUKI MIYAMOTO
,
KAZUHITO FURUYA
.
Language
Japanese
Journal/Book name
Japanese:
English:
Volume, Number, Page
Published date
Mar. 2009
Publisher
Japanese:
English:
Conference name
Japanese:
2009年春季第56回応用物理学関係連合講演会
English:
The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies
Conference site
Japanese:
茨城県つくば市
English:
Ibaraki, Japan
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Tokyo Institute of Technology All rights reserved.