Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors

Publication Information

Title

Japanese:
English:	Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors

Author

Japanese:	高村陽太, 長浜陽平, 西島輝, 中根了昌, 菅原聡.
English:	Y. Takamura, Y. Nagahama, A. Nishijima, R. Nakane, S. Sugahara.

Language

English

Journal/Book name

Japanese:
English:	Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME2008)

Volume, Number, Page

session E15-E23 paper 2480

Published date

Oct. 2008

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:	Honolulu, USA