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Title
Japanese: 
English:Loss Reduction of Si Wire Waveguide Fabricated by Edge-Enhancement Writing for Electron Beam Lithography and Reactive Ion Etching Using Double Layered Resist Mask with C60 
Author
Japanese: 井上 敬太, PLUMWONGROT DHANORM, 西山 伸彦, 阪本 真一, 榎本 晴基, 田村 茂雄, 丸山 武男, 荒井 滋久.  
English: Keita Inoue, Dhanorm Plumwongrot, Nobuhiko Nishiyama, Shinichi Sakamoto, Haruki Enomoto, Shigeo Tamura, Takeo Maruyama, Shigehisa Arai.  
Language English 
Journal/Book name
Japanese: 
English:Jpn. J. Appl. Phys. 
Volume, Number, Page vol. 48    no. 3    p. 030208
Published date Mar. 2009 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
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File
DOI http://dx.doi.org/10.1143/JJAP.48.030208
Abstract Loss reduction methods for single-mode photonic wire in silicon-on-insulator were investigated, with a Si core size of 200 × 440 nm2, fabricated with electron beam lithography and dry etching, using a double layer of electron beam (EB) resist mask. The transverse electric (TE) mode propagation loss measured at a wavelength of 1550 nm was 4.5 dB/cm, which is, to the best of our knowledge, the lowest value ever attained for a Si wire waveguide fabricated by the parallel plate reactive ion etching (RIE) method.

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