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Title
Japanese: 
English:Electron-detrapping from localized states in the band gap of (Ba,Sr)TiO3 
Author
Japanese: 原亨.  
English: Toru Hara.  
Language English 
Journal/Book name
Japanese: 
English:Solid State Commun. 
Volume, Number, Page vol. 132        p. 109
Published date Oct. 2004 
Publisher
Japanese: 
English:Elsevier 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TVW-4CXHGFN-1&_user=126251&_rdoc=1&_fmt=&_orig=search&_sort=d&_docanchor=&view=c&_searchStrId=965654685&_rerunOrigin=scholar.google&_acct=C000010218&_version=1&_urlVersion=0&_userid=126251&md5=7aa80ccae76f8a1aed7b9d0f1e24a22b
 
DOI https://doi.org/10.1016/j.ssc.2004.07.014
Abstract We tried to relate the relaxation currents of Pt/62-nm-thick (Ba0.5Sr0.5)TiO3/Pt capacitors to the results of ultraviolet photoemission spectroscopic measurements for the 62-nm-thick (Ba0.5Sr0.5)TiO3/Pt specimens. The slowest relaxation (159-313 s at applied voltages of 1.5-3 V, and at a measuring temperature of 40 degrees centigrade) and the relatively faster relaxations (4.92-5.43 s and 0.25-0.46 s) were assigned as the electron-detrapping from the localized state at 0.80 eV below the quasi-Fermi level, from the localized state at 0.55 eV below the quasi-Fermi level, and from the localized state at 0.30 eV below the quasi-Fermi level, respectively. The decreasing of relaxation time in accordance with the increasing of bias voltage is probably due to the decreasing of depletion width. The decreasing of depletion width is probably due to the detrapping of electrons from deep localized states in accordance with the downward bending of quasi-Fermi level in the depletion layer, and due to the decreasing of relative dielectric constant in the depletion layer in accordance with the increasing of bias voltage.

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