InAs-Channel Metal-Oxide-Semiconductor HEMTs  with Atomic-Layer-Deposited Al2O3 Gate Dielectric

Publication Information

Title

Japanese:
English:	InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric

Author

Japanese:	Chia-Yuan Chang, Heng-Tung Hsu, Edward Yi Chang, Hai-Dang Trinh, 宮本恭幸.
English:	Chia-Yuan Chang, Heng-Tung Hsu, Edward Yi Chang, Hai-Dang Trinh, Yasuyuki Miyamoto.

Language

English

Journal/Book name

Japanese:
English:	Electrochemical and Solid-State Letters,

Volume, Number, Page

vol. 12 no. 12 pp. H456-H459

Published date

Dec. 2009

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI