Device characteristics improvement of a-In–Ga–Zn–O TFTs by low-temperature annealing

Publication Information

Title

Japanese:
English:	Device characteristics improvement of a-In–Ga–Zn–O TFTs by low-temperature annealing

Author

Japanese:	菊地優友, Kenji Nomura, 柳博, 神谷利夫, 平野正浩, 細野秀雄.
English:	Yutomo Kikuchi, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono.

Language

English

Journal/Book name

Japanese:
English:	Thin Solid Films

Volume, Number, Page

vol. 518 pp. 3017-3021

Published date

2010

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI