Radiation Effects of 20-100 keV Deuterium Ions in Silicon

Publication Information

Title

Japanese:
English:	Radiation Effects of 20-100 keV Deuterium Ions in Silicon

Author

Japanese:	Y. Tagishi, 片渕竜也, H. Kishita, K. Mizukoshi, Y. Mukouhara, N. Yamada.
English:	Y. Tagishi, T. Katabuchi, H. Kishita, K. Mizukoshi, Y. Mukouhara, N. Yamada.

Language

English

Journal/Book name

Japanese:
English:	Proceedings of the Ninth International Conference on Ion Beam Modification of Materials

Volume, Number, Page

837-840

Published date

1995

Publisher

Japanese:
English:

Conference name

Japanese:
English:	Ninthe International Conference on Ion Beam Modification of Materials

Conference site

Japanese:
English:	Canberra, Australia, 5-10 February, 1995