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Title
Japanese: 
English:Well-width dependence of radiative and nonradiative lifetimes in ZnO-based multiple quantum wells 
Author
Japanese: Chia Chin Hau, 牧野 哲征, 瀬川 勇三朗, 川崎 雅司, 大友 明, 田村 謙太郎, 鯉沼 秀臣.  
English: C.H. Chia, T. Makino, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, H. Koinuma.  
Language English 
Journal/Book name
Japanese: 
English:Physica Status Solidi B-Basic Research 
Volume, Number, Page Vol. 229    No. 2    pp. 863-866
Published date Jan. 2002 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL <Go to ISI>://000173806700047
 
DOI https://doi.org/10.1002/1521-3951(200201)229:2<863::AID-PSSB863>3.0.CO;2-3
Abstract Time-resolved photoluminescence spectroscopy (TRPL) has been employed to study a set of ZnO/Zn1-xMgxO (x = 0.12) multiple quantum wells (MQWs) grown by laser molecular beam epitaxy, with well-width L-w varying from 6.91 to 46.5 Angstrom. We have estimated the L-w dependence of radiative and nonradiative recombination lifetimes of excitons at low temperature (5 K). Radiative recombination lifetimes were dramatically increased at narrow L-w and the thermal release effect of excitonic localization is discussed. On the other hand, the nonradiative recombination rates were almost constant over the L-w range studied, so we conclude that suppression of quantum efficiency due to carrier leakage can be avoided even at narrow L-w.

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