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Title
Japanese: 
English:Confinement-enhanced biexciton binding energy in ZnO/ZnMgO multiple quantum wells 
Author
Japanese: Chia Chin Hau, 牧野 哲征, 瀬川 勇三朗, 川崎 雅司, 大友 明, 田村 謙太郎, 鯉沼 秀臣.  
English: C.H. Chia, T. Makino, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, H. Koinuma.  
Language English 
Journal/Book name
Japanese: 
English:Applied Physics Letters 
Volume, Number, Page Vol. 82    No. 12    pp. 1848-1850
Published date Apr. 2003 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
File
Official URL <Go to ISI>://000181666500014
 
DOI https://doi.org/10.1063/1.1561158
Abstract By employing a nanosecond pump-probe method, biexciton formation process was investigated in ZnO/Zn1-xMgxO (x=0.26) multiple quantum wells (MQWs) grown on ScAlMgO4 substrate by laser molecular-beam epitaxy. Bleaching of absorption due to the saturation of excitonic states, and induced absorption related to the exciton-biexciton transition were observed in their spectra. It is demonstrated that the pump-probe method allows us to precisely determine binding energies of exciton complexes even applied to the semiconductor quantum structures where the localization effect are not negligible. This is because a transition from free-excitonic states to free-biexcitonic states is involved in the induced absorption process. The biexciton binding energy is a monotonically decreasing function of well width (L-w). For the MQWs with L-w smaller than 2.5 nm, the biexciton binding energy is larger than 25 meV, comparable to the thermal energy of room temperature.

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