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Title
Japanese: 
English:GaN growth on ozonized sapphire(0001) substrates by MOVPE 
Author
Japanese: 本田 徹, 井上 彰, 森 美由紀, 白澤 智恵, 持田 宜晃, 五月女 耕二, 坂口 孝浩, 大友 明, 川崎 雅司, 鯉沼 秀臣, 小山 二三夫, 伊賀 健一.  
English: T. Honda, A. Inoue, M. Mori, T. Shirasawa, N. Mochida, K. Saotome, T. Sakaguchi, A. Ohtomo, M. Kawasaki, H. Koinuma, F. Koyama, K. Iga.  
Language English 
Journal/Book name
Japanese: 
English:J. Crystal Growth 
Volume, Number, Page Vol. 195    No. 1-4    pp. 319-322
Published date Dec. 1998 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL <Go to ISI>://000077839200054
 
DOI https://doi.org/10.1016/S0022-0248(98)00692-7
Abstract The ozonization of sapphire(0 0 0 1) substrates has been performed prior to metalorganic vapor phase epitaxy (MOVPE) to remove carbon-pollution of sapphire substrates. The ozonization was carried out using oxygen gas and low-pressure mercury lamp irradiation. The result of X-ray diffraction indicates that the distribution of c-axis tilt in the GaN layer was reduced by ozonization treatment. The photoluminescence intensity was higher than that without ozonization. The surface morphology of GaN layers also became smooth. The ozonization process is found to be effective for growing a high-quality GaN on sapphire.

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