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Title
Japanese: 
English:Gallium concentration dependence of room-temperature near-band-edge luminescence in n-type ZnO : Ga 
Author
Japanese: 牧野 哲征, 瀬川 勇三朗, 吉田 伸, 塚崎 敦, 大友 明, 川崎 雅司.  
English: T. Makino, Y. Segawa, S. Yoshida, A. Tsukazaki, A. Ohtomo, M. Kawasaki.  
Language English 
Journal/Book name
Japanese: 
English:Applied Physics Letters 
Volume, Number, Page Vol. 85    No. 5    pp. 759-761
Published date Aug. 2004 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
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File
Official URL <Go to ISI>://000222969200021
 
DOI https://doi.org/10.1063/1.1776630
Abstract We investigated the optical properties of epitaxial n-type ZnO films grown on lattice-matched ScAlMgO4 substrates. As the Ga doping concentration increased up to 6x10(20) cm(-3), the absorption edge showed a systematic blueshift, consistent with the Burstein-Moss effect. A bright near-band-edge photoluminescence (PL) could be observed even at room temperature, the intensity of which increased monotonically as the doping concentration was increased except for the highest doping level. It indicates that nonradiative transitions dominate at a low doping density. Both a Stokes shift and broadening in the PL band are monotonically increasing functions of donor concentration, which was explained in terms of potential fluctuations caused by the random distribution of donor impurities.

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