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Title
Japanese: 
English:Spectral shape analysis of ultraviolet luminescence in n-type ZnO : Ga 
Author
Japanese: 牧野 哲征, 瀬川 勇三朗, 吉田 伸, 塚崎 敦, 大友 明, 川崎 雅司, 鯉沼 秀臣.  
English: T. Makino, Y. Segawa, S. Yoshida, A. Tsukazaki, A. Ohtomo, M. Kawasaki, H. Koinuma.  
Language English 
Journal/Book name
Japanese: 
English:Journal of Applied Physics 
Volume, Number, Page Vol. 98    No. 9    093520-1-4
Published date Nov. 2005 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
File
Official URL <Go to ISI>://000233304700031
 
DOI https://doi.org/10.1063/1.2127167
Abstract Thin films of laser molecular-beam epitaxy grown n-type Ga-doped ZnO were investigated with respect to their optical properties. Intense room-temperature photoluminescence (PL) in the near-band edge (NBE) region was observed. Moreover, its broadening of PL band was significantly larger than predicted by theoretical results modeled in terms of potential fluctuations caused by the random distribution of donor impurities. In addition, the line shape was rather asymmetrical. To explain these features of the NBE bands, a vibronic model was developed accounting for contributions from a series of phonon replicas.

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